活動報告・予告/Annual Reports/上野研究室2020 の履歴(No.27)


研究室教員

研究課題

  1. 遷移金属ダイカルコゲナイド等のカルコゲナイド系層状物質単結晶形成,単層剥離と素子応用
  2. 他のさまざまな層状物質の単結晶形成,単層剥離と素子応用
  3. 化学気相成長法(CVD),原子層堆積法(ALD)によるカルコゲナイド系層状物質単結晶薄膜の成長
  4. 層状物質のラマン分光測定,表面電子分光測定

発表論文

  1. "Synthesis of AlOx thin films by atmospheric pressure mist chemical vapor deposition for surface passivation and electrical insulator layers"
    • A. Rajib, K. M. Enamul, S. Kurosu, T. Ukai, M. Tokuda, Y. Fujii, T. Hanajiri, R. Ishikawa, K. Ueno, and H. Shirai
    • J. Vac. Sci. Technol. A 38 (2020) 033413
    • DOI:10.1116/1.5143273
  2. "Flat bands in twisted bilayer transition metal dichalcogenides"
  3. "Effect of thermally annealed atomic-layer-deposited AlOx/chemical tunnel oxide stack layer at the PEDOT:PSS/n-type Si interface to improve its junction quality"
    • Md E. Karim, Y. Nasuno, A. Kuddus, T. Ukai, S. Kurosu, M. Tokuda, Y. Fujii, T. Hanajiri, R. Ishikawa, K. Ueno, and H. Shirai
    • J. Appl. Phys. 128 (2020) 045305
    • DOI:10.1063/5.0007918
  4. "Facile and reversible carrier-type manipulation of layered MoTe2 toward long-term stable electronics"
    • M. Li, C.-Y. Lin, Y.-M. Chang, S.-H. Yang, M.-P. Lee, C.-F. Chen, K.-C. Lee, F.-S. Yang, Y. Chou, Y.-C. Lin, K. Ueno, Y. Shi, Y.-C. Chou, K. Tsukagoshi, Y.-F. Lin
    • ACS Appl. Mater. Interfaces 12 (2020) 42918-42924
    • DOI:10.1021/acsami.0c09922
  5. "Exciton diffusion in hBN-encapsulated monolayer MoSe2"
    • T. Hotta, S. Higuchi, A. Ueda, K. Shinokita, Y. Miyauchi, K. Matsuda, K. Ueno, T. Taniguchi, K. Watanabe, and R. Kitaura
    • Phys. Rev. B 102 (2020) 115424
    • DOI:10.1103/PhysRevB.102.115424
  6. "Understanding the Memory Window Overestimation of 2D Materials Based Floating Gate Type Memory Devices by Measuring Floating Gate Voltage"
    • T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio
    • Small 16 (2020) 2004907
    • DOI:10.1002/smll.202004907
  7. "All 2D heterostructure Tunnel Field Effect Transistors: Impact of Band Alignment and Heterointerface Quality"
    • K. Nakamura, N. Nagamura, K. Ueno, T. Taniguchi, K. Watanabe, K. Nagashio
    • ACS Appl. Mater. Interfaces 12 (2020) 51598-51606
    • DOI:10.1021/acsami.0c13233
  8. "Enhanced Exciton-Exciton Collisions in an Ultraflat Monolayer MoSe2 Prepared through Deterministic Flattening"
    • T. Hotta, A. Ueda, S. Higuchi, M. Okada, T. Shimizu, T. Kubo, K. Ueno, T. Taniguchi, K. Watanabe, R. Kitaura
    • ACS Nano 15 (2021) 1370–1377
    • DOI:10.1021/acsnano.0c08642
  9. "Twist Angle-Dependent Interlayer Exciton Lifetimes in van der Waals Heterostructures"
    • J. Choi, M. Florian, A. Steinhoff, D. Erben , K. Tran, D. S. Kim, L. Sun, J. Quan, R. Claassen, S. Majumder, J. A. Hollingsworth, T. Taniguchi, K. Watanabe, K. Ueno, A. Singh, G. Moody, F. Jahnke, and X. Li
    • Phys. Rev. Lett. 126 (2021) 047401
    • DOI:10.1103/PhysRevLett.126.047401
  10. "AlOx Thin Films Synthesized by Mist Chemical Vapor Deposition, Monitored by a Fast-Scanning Mobility Particle Analyzer, and Applied as a Gate Insulating Layer in the Field-Effect Transistors"
    • A. Rajib, A. Kuddus, T. Shida, K. Ueno, and H. Shirai
    • ACS Appl. Electron. Mater. 3 (2021) 658–667
    • DOI:10.1021/acsaelm.0c00758
  11. "Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory"
    • T. Sasaki, K. Ueno, T. Taniguchi, K. Watanabe, T. Nishimura, and K. Nagashio
    • ACS nano (2021), in press
    • DOI:10.1021/acsnano.0c10005

学会(予定も含む)

研究会,セミナー講演(予定も含む)

外部資金獲得状況

  1. 2018〜2020年度 科学研究費補助金 基盤研究(B)一般 代表:上野啓司 「高蒸気圧原料による低温ファンデルワールス・エピタキシー」

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